STFI260N6F6 Datasheet - STMicroelectronics

STFI260N6F6 N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 12 3 I²PAKFP (TO-281) Figure 1. Internal schematic diagram $ ' 3 !-V Ta.

STFI260N6F6 Features

* Order codes STFI260N6F6 VDSS 60 V RDS(on) max < 0.003 Ω ID 80 A

* Fully insulated and low profile package with increased creepage path from pin to heatsink plate

* Low gate charge

* Very low on-resistance

* High avalanche ruggedness Application

* Switching applications Des

STFI260N6F6-STMicroelectronics.pdf