STFI24N60M2 - N-channel Power MOSFET
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor.
STFI24N60M2 Features
* 3 2 1
TO-220FP
123
I2PAKFP (TO-281)
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Order codes STF24N60M2 STFI24N60M2
VDS @ TJmax 650 V
RDS(on) max ID 0.19 Ω 18 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate inpu