STFI24N60M2

N-channel Power MOSFET

STMicroelectronics

STFI24N60M2 Features

* 3 2 1 TO-220FP 123 I2PAKFP (TO-281) Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes STF24N60M2 STFI24N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.19 Ω 18 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate inpu

STFI24N60M2 General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor.

STFI24N60M2 Datasheet (508.63 KB)

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STFI24N60M2

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STMicroelectronics ↗

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508.63 KB

Description:

N-channel power mosfet.
STF24N60M2, STFI24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP and I2PAKFP packages Datasheet

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STFI24N60M2 N-channel Power MOSFET STMicroelectronics

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STFI24N60M2 Features

STFI24N60M2 General Description

Datasheet Details

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