STFI24N60M2, STF24N60M2 Datasheet - STMicroelectronics

STFI24N60M2 - N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor.

STFI24N60M2 Features

* 3 2 1 TO-220FP 123 I2PAKFP (TO-281) Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes STF24N60M2 STFI24N60M2 VDS @ TJmax 650 V RDS(on) max ID 0.19 Ω 18 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate inpu

STF24N60M2-STMicroelectronics.pdf