STFI24NM60N

N-channel Power MOSFET

STMicroelectronics

STFI24NM60N Features

* 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram Order codes VDS @Tjmax RDS(on) max. ID STFI24NM60N 650 V 0.19 Ω 17 A

* Fully insulated and low profile package with increased creepage path from pin to heatsink plate

* 100% avalanche tested

* Low input capacita

STFI24NM60N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STFI24NM60N Datasheet (389.23 KB)