STFI26NM60N Datasheet - STMicroelectronics

STFI26NM60N N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

STFI26NM60N Features

* Order code STFI26NM60N VDS 600 V RDS(on) max 0.165 Ω ID 20 A

* Fully insulated and low profile package with increased creepage path from pin to heatsink plate

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

* Switching

STFI26NM60N-STMicroelectronics.pdf