Datasheet Details
- Part number
- STGB30H65DFB2
- Manufacturer
- STMicroelectronics ↗
- File Size
- 645.04 KB
- Datasheet
- STGB30H65DFB2-STMicroelectronics.pdf
- Description
- high-speed HB2 series IGBT
STGB30H65DFB2 Description
STGB30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package TAB 2 3 1 D²PAK C(2, TAB) G(1) E(3) Featu.
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
STGB30H65DFB2 Features
* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ. ) @ IC = 30 A
* Very fast and soft recovery co-packaged diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) tempera
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