STGB30H65DFB2 Datasheet - STMicroelectronics

high-speed HB2 series IGBT

STGB30H65DFB2 Features

* Maximum junction temperature : TJ = 175 °C

* Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

* Very fast and soft recovery co-packaged diode

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(sat) tempera

STGB30H65DFB2 General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A.

STGB30H65DFB2 Datasheet (645.04 KB)

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STGB30H65DFB2

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STMicroelectronics ↗

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High-speed hb2 series igbt.
STGB30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package TAB 2 3 1 D²PAK C(2, TAB) G(1) E(3) Featu.

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STGB30H65DFB2 high-speed HB2 series IGBT STMicroelectronics

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STGB30H65DFB2 Features

STGB30H65DFB2 General Description

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