* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
* Very fast and soft recovery co-packaged diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) tempera
STGB30H65DFB2 Datasheet (645.04 KB)
STGB30H65DFB2
645.04 KB
High-speed hb2 series igbt.
STGB30H65DFB2
Datasheet
Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package
TAB 2 3 1
D²PAK
C(2, TAB)
G(1)
E(3)
Featu.
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