STGB30H65DFB2 Datasheet, Igbt, STMicroelectronics

STGB30H65DFB2 Features

• Igbt
• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
• Very fast and soft recovery co-packaged diode
• Minimized tail

PDF File Details

Part number:

STGB30H65DFB2

Manufacturer:

STMicroelectronics ↗

File Size:

645.04kb

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📄 Datasheet

Description:

High-speed hb2 series igbt. The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performanc

STGB30H65DFB2 Application

• Applications
• NG1E3C2T Welding Power factor correction UPS Solar inverters Chargers Description

TAGS

STGB30H65DFB2

STMicroelectronics

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