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STGB30H65DFB2 Datasheet - STMicroelectronics

STGB30H65DFB2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGB30H65DFB2

Manufacturer:

STMicroelectronics ↗

File Size:

645.04 KB

Description:

High-speed hb2 series igbt.

STGB30H65DFB2, high-speed HB2 series IGBT

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

A

STGB30H65DFB2 Features

* Maximum junction temperature : TJ = 175 °C

* Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

* Very fast and soft recovery co-packaged diode

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(sat) tempera

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