STGB30H65DFB2 high-speed HB2 series IGBT

STMicroelectronics

Description

STGB30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D²PAK package TAB 2 3 1 D²PAK C(2, TAB) G(1) E(3) Featu.
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: STGB30H65DFB2
Manufacturer: STMicroelectronics ↗
File Size: 645.04 KB
Datasheet: STGB30H65DFB2-STMicroelectronics.pdf
Description: high-speed HB2 series IGBT

Features

* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ. ) @ IC = 30 A
* Very fast and soft recovery co-packaged diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) tempera

STGB30H65DFB2 Distributors

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high-speed HB2 series IGBT STMicroelectronics

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