Description
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Datasheet Trench gate field-stop 650 V, 20 A high speed HB series IGBT 1 TO-3PF 3 2 1 TAB 3 2 1 TO-247 3 .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
Features
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V (typ. ) @ IC = 20 A
* Tight parameters distribution
* Safe paralleling
Applications
* Photovoltaic inverters
* Power factor correction
* Welding