STGW25H120DF2 - Trench gate field-stop IGBT
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.
Furthermore,
STGW25H120DF2 Features
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 2.1 V (typ.) @ IC = 25 A
* 5 μs minimum short circuit withstand time at TJ = 150 °C
* Safe paralleling
* Low thermal resistance
