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STGW25H120DF2 - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	STGW25H120DF2
Manufacturer	STMicroelectronics
File Size	911.18 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW25H120DF2-STMicroelectronics.pdf

STGW25H120DF2 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
VCE(sat) = 2.1 V (typ. ) @ IC = 25 A.
5 μs minimum short circuit withstand time at TJ = 150 °C.
Safe paralleling.
Low thermal resistance.
Very fast recovery antiparallel diode.

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Published: Apr 3, 2020 |