STGW25H120DF2 Datasheet - STMicroelectronics

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STGW25H120DF2 Trench gate field-stop IGBT

STGW25H120DF2, STGWA25H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 25 A high speed 3 2 1 TO-247 3 12 TO-247 long leads Product s.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGW25H120DF2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGW25H120DF2

Manufacturer:

STMicroelectronics ↗

File Size:

911.18 KB

Description:

Trench gate field-stop IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 2.1 V (typ. ) @ IC = 25 A
* 5 μs minimum short circuit withstand time at TJ = 150 °C
* Safe paralleling
* Low thermal resistance

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

STGW25H120DF2 Distributors

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STGW25H120DF2 Trench gate field-stop IGBT STMicroelectronics

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