STGW25H120F2 Datasheet - STMicroelectronics

STGW25H120F2 Trench gate field-stop IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover.

STGW25H120F2 Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 2.1 V (typ.) @ IC = 25 A

* 5 µs minimum short circuit withstand time at TJ=150 °C

* Tight parameters distribution

* Safe paralleling

STGW25H120F2-STMicroelectronics.pdf