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STGW25H120F2 Trench gate field-stop IGBT

STGW25H120F2 Description

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data 72       72ORQ.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

STGW25H120F2 Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 2.1 V (typ. ) @ IC = 25 A
* 5 µs minimum short circuit withstand time at TJ=150 °C
* Tight parameters distribution
* Safe paralleling

STGW25H120F2 Applications

* Uninterruptible power supply
* Welding machines
* Photovoltaic inverters
* Power factor correction

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