STGW25H120F2 - Trench gate field-stop IGBT

STMicroelectronics

Datasheet Details

Part number	STGW25H120F2
Manufacturer	STMicroelectronics
File Size	601.16 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW25H120F2-STMicroelectronics.pdf

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
VCE(sat) = 2.1 V (typ. ) @ IC = 25 A.
5 µs minimum short circuit withstand time at TJ=150 °C.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance Figure 1. Internal schematic diagram C (2) G (1) SC12850 E (3).

📁 STGW25H120F2 Similar Datasheet

Other Datasheets by STMicroelectronics

Published: May 28, 2016 |