STGW25H120F2 - Trench gate field-stop IGBT
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.
Moreover
STGW25H120F2 Features
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 2.1 V (typ.) @ IC = 25 A
* 5 µs minimum short circuit withstand time at TJ=150 °C
* Tight parameters distribution
* Safe paralleling
