STGW25H120F2 Datasheet - STMicroelectronics

Trench gate field-stop IGBT

STGW25H120F2 Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 2.1 V (typ.) @ IC = 25 A

* 5 µs minimum short circuit withstand time at TJ=150 °C

* Tight parameters distribution

* Safe paralleling

STGW25H120F2 General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover.

STGW25H120F2 Datasheet (601.16 KB)

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Part number:

STGW25H120F2

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STMicroelectronics ↗

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601.16 KB

Description:

Trench gate field-stop igbt.
STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data 72 72ORQ.

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STGW25H120F2 Features

STGW25H120F2 General Description

Datasheet Details

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