STGW25M120DF3 - 1200V 25A low-loss M series IGBT

STMicroelectronics

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Datasheet Details

Part number	STGW25M120DF3
Manufacturer	STMicroelectronics
File Size	664.08 KB
Description	1200V 25A low-loss M series IGBT
Datasheet	STGW25M120DF3-STMicroelectronics.pdf

STGW25M120DF3 Product details

Description

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.Product status link STGW25M120DF3 Product summary Order

Features

Maximum junction temperature: TJ = 175 °C.
10 μs of short-circuit withstand time.
Low VCE(sat) = 1.85 V (typ. ) @ IC = 25 A.
Tight parameter distribution.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft- and fast-recovery antiparallel diode G(1) C(2, TAB).

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Published: Dec 11, 2019 |