STGW25M120DF3 - 1200V 25A low-loss M series IGBT
E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is esse
STGW25M120DF3 Features
* Maximum junction temperature: TJ = 175 °C
* 10 μs of short-circuit withstand time
* Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
* Tight parameter distribution
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Soft- and fast-
