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STGW25M120DF3 Datasheet - STMicroelectronics

STGW25M120DF3 - 1200V 25A low-loss M series IGBT

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is esse

STGW25M120DF3 Features

* Maximum junction temperature: TJ = 175 °C

* 10 μs of short-circuit withstand time

* Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Soft- and fast-

STGW25M120DF3-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGW25M120DF3

Manufacturer:

STMicroelectronics ↗

File Size:

664.08 KB

Description:

1200v 25a low-loss m series igbt.

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