STGW25M120DF3 Datasheet - STMicroelectronics

STGW25M120DF3 1200V 25A low-loss M series IGBT

E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is esse.

STGW25M120DF3 Features

* Maximum junction temperature: TJ = 175 °C

* 10 μs of short-circuit withstand time

* Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A

* Tight parameter distribution

* Positive VCE(sat) temperature coefficient

* Low thermal resistance

* Soft- and fast-

STGW25M120DF3-STMicroelectronics.pdf