Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
Features
- Maximum junction temperature: TJ = 175 °C.
- Very high speed switching series
3 2 1 1
3.
- Tail-less switching off.
- Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
- Tight parameters distribution.
- Safe paralleling.
- Low thermal resistance
3
TO-220
TAB
D²PAK
3 2 1 1 2.
- Very fast soft recovery antiparallel diode.
- Lead free package
TO-247
TO-3P
Figure 1. Internal schematic diagram.
