STGW20V60DF Datasheet - STMicroelectronics

600V 20A very high speed trench gate field-stop IGBT

STGW20V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Very high speed switching series 3 2 1 1 3

* Tail-less switching off

* Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safe paralleling

* Low thermal

STGW20V60DF General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore,.

STGW20V60DF Datasheet (2.07 MB)

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Datasheet Details

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STGW20V60DF

Manufacturer:

STMicroelectronics ↗

File Size:

2.07 MB

Description:

600v 20a very high speed trench gate field-stop igbt.
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB Feat.

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STGW20V60DF 600V 20A very high speed trench gate field-stop IGBT STMicroelectronics

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STGW20V60DF Features

STGW20V60DF General Description

Datasheet Details

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