20A Datasheet | Specifications & PDF Download

PT320AT01-1 Product Specification Model name: PT320AT01-1 Ver. 1.0 Date: 29. Mar.2017 ( ) Preliminary Specification ( v ) Approval Specification A

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Product Specification ( √ ) Preliminary Specification ( ) Approval Specification The information described in this specification is preliminary and c

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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www.DataSheet4U.com U120A June 1993 120 Pin Ceramic Pin Grid Array NS Package Number U120A All dimensions are in inches (millimeters) LIFE SUPPOR

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3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from

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Customer: Sony DATE: 19.December.2012 SAMSUNG TFT-LCD MODEL: LSY320AN02-A (LCD Panel + Driver Ass’y O/C) The Information described in this specif

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Product Specification ( √ ) Preliminary Specification ( ) Approval Specification Any Modification of Spec is not allowed without SDC’s permission CU

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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Power TVS in DO-214AB/SMC 8.0SMDJ Series CREATEK Microelectronics Features ■ Glass passivated chip ■ 8000W peak pulse power(10/1000us) ■ High accura

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LINEAR INTEGRATED CIRCUIT TRIAC/SCR PHASE CONTROL The L 120A is a monolithic integrated circuit in 16-lead dual in-line plastic package. It incorpora

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3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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1.0SMBxx(C)A Series Surface Mount Transient Voltage Suppressor Rectifiers Reverse Voltage 5.8 ~ 450 V 1000 Watt Peak Pulse Power Features ● Glass pas

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105V, 120A N-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SGP105R5T uses advanced SGT technology and design to provide excellent RDS(on) with low gate

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SJMOS N-MOSFET 650V, 0.27Ω, A Features • Much lower Ron*A performance for On-state efficiency • Better efficiency due to very low FOM • Qualified fo

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PSC20120J 1200 V, 20 A SiC Schottky diode in D2PAK R2P 30 April 2025 Product data sheet 1. General description Nexperia introduces leading edge Si

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120A, 30V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD3012T uses advanced trench technology and design to provide excellent RDS(pn) with low gate char

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SM15S Series Surface Mount Transient Voltage Suppressors Features • RoHS compliant junction passivation • SM15SxxA available in Uni-directional polari

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Datasheet Industrial NC2700MA 28V Synchronous Buck 20A Switching Regulator with Built-in Inductor/MOSFET FEATURES GENERAL DESCRIPTION  Input Volt

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