STGW40H120DF2

Trench gate field-stop IGBT

STMicroelectronics

STGW40H120DF2 Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 2.1 V (typ.) @ IC = 40 A

* 5 μs minimum short circuit withstand time at TJ=150 °C

* Safe paralleling

* Very fast recovery antiparallel diode

* Low thermal r

STGW40H120DF2 General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Further.

STGW40H120DF2 Datasheet (819.58 KB)