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STGW40M120DF3

Trench gate field-stop IGBT

STGW40M120DF3 Features

*    72 72ORQJOHDGV Figure 1.Internal schematic diagram

* 10 µs of short-circuit withstand time

* VCE(sat) = 1.85 V (typ.) @ IC = 40 A

* Tight parameters distribution

* Safer paralleling

* Low thermal resistance

* Soft and fast recovery an

STGW40M120DF3 General Description


*  (  This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capabi.

STGW40M120DF3 Datasheet (1.01 MB)

Preview of STGW40M120DF3 PDF

Datasheet Details

Part number:

STGW40M120DF3

Manufacturer:

STMicroelectronics ↗

File Size:

1.01 MB

Description:

Trench gate field-stop igbt.

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STGW40M120DF3 Trench gate field-stop IGBT STMicroelectronics

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