STGW40H65DFB-4 Datasheet (STMicroelectronics)

STGW40H65DFB-4, IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

A faster switching eve

STGW40H65DFB-4 Features

* TO247-4 2 34 1 C(1, TAB)

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A

* Tight parameter distribution

* Safe paralleling

* Po