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STGW40H65DFB-4 - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGW40H65DFB-4
Manufacturer	STMicroelectronics ↗
File Size	471.95 KB
Description	IGBT
Datasheet	STGW40H65DFB-4-STMicroelectronics.pdf

STGW40H65DFB-4 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TO247-4 2 34 1 C(1, TAB).
Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.
Excellent switching performance thanks to the extra driving kelv.

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Published: Apr 13, 2020 |