STGW40H65DFB Datasheet - STMicroelectronics

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STGW40H65DFB IGBT

STGW40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT 3 2 1 TO-247 .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGW40H65DFB-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGW40H65DFB

Manufacturer:

STMicroelectronics ↗

File Size:

498.84 KB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temperature c

Applications

* Photovoltaic inverters

STGW40H65DFB Distributors

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