STGW40V60DF Datasheet (STMicroelectronics) - Trench gate field-stop IGBT

STGW40V60DF, Trench gate field-stop IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, the

STGW40V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.8 V (typ.) @ IC = 40 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode G(1) E(3) NG1