STGWA30H65DFB2 IGBT

STMicroelectronics

Description

STGWA30H65DFB2 Datasheet Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package .
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: STGWA30H65DFB2
Manufacturer: STMicroelectronics ↗
File Size: 508.96 KB
Datasheet: STGWA30H65DFB2-STMicroelectronics.pdf
Description: IGBT

Features

* C(2, TAB)
* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.65 V (typ. ) @ IC = 30 A
* Very fast and soft recovery co-packaged diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(

Applications

* G(1) E(3)
* Welding
* Power factor correction
* UPS
* Solar inverters

STGWA30H65DFB2 Distributors

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STGWA30H65DFB2 IGBT STMicroelectronics

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