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STGWA30H65DFB2 - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGWA30H65DFB2
Manufacturer	STMicroelectronics ↗
File Size	508.96 KB
Description	IGBT
Datasheet	STGWA30H65DFB2-STMicroelectronics.pdf

STGWA30H65DFB2 Product details

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

Features

C(2, TAB).
Maximum junction temperature : TJ = 175 °C.
Low VCE(sat) = 1.65 V (typ. ) @ IC = 30 A.
Very fast and soft recovery co-packaged diode.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient.

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Published: Apr 26, 2020 |