STGWA30H65DFB2

IGBT

STMicroelectronics

STGWA30H65DFB2 Features

* C(2, TAB)

* Maximum junction temperature : TJ = 175 °C

* Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A

* Very fast and soft recovery co-packaged diode

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(

STGWA30H65DFB2 General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. .

STGWA30H65DFB2 Datasheet (508.96 KB)