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STGWA30H65FB IGBT

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Description

STGWA30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high-speed in a TO-247 long leads package Datasheet - production data Figure 1: Inte.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

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Features

* Maximum junction temperature: TJ = 175 °C
* High-speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V(typ) @ IC = 30 A
* Safe paralleling
* Tight parameter distribution

Applications

* Photovoltaic inverters

STGWA30H65FB Distributors

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