Description
plur
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.Order code STGW30M65DF2 STGWA30M65DF2
Table 1: Device summ
Features
- 6 µs of minimum short-circuit withstand time.
- VCE(sat) = 1.55 V (typ. ) @ IC = 50 A.
- Tight parameters distribution.
- Safer paralleling.
- Low thermal resistance.
- Soft and very fast recovery antiparallel diode.