STGWA30M65DF2

Trench gate field-stop IGBT

STMicroelectronics

STGWA30M65DF2 Features

* 6 µs of minimum short-circuit withstand time

* VCE(sat) = 1.55 V (typ.) @ IC = 50 A

* Tight parameters distribution

* Safer paralleling

* Low thermal resistance

* Soft and very fast recovery antiparallel diode Applications

* Motor control

* UPS

* PFC Description

STGWA30M65DF2 General Description

plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are .

STGWA30M65DF2 Datasheet (562.55 KB)

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Datasheet Details

Part number:

STGWA30M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

562.55 KB

Description:

Trench gate field-stop igbt.
STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diag.

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STGWA30M65DF2 Trench gate field-stop IGBT STMicroelectronics

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STGWA30M65DF2 Features

STGWA30M65DF2 General Description

Datasheet Details

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