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STGWA40H65DFB - IGBT

STMicroelectronics

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Datasheet Details

Part number	STGWA40H65DFB
Manufacturer	STMicroelectronics ↗
File Size	526.47 KB
Description	IGBT
Datasheet	STGWA40H65DFB-STMicroelectronics.pdf

STGWA40H65DFB Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Apr 13, 2020 |