STGWA40HP65FB2 - high-speed HB2 series IGBT
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.
A
STGWA40HP65FB2 Features
* Maximum junction temperature : TJ = 175 °C
* Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A
* Co-packaged protection diode
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance
* Positive VCE(sat) temperature coefficient A
