STGWA40H60DLFB

IGBT

STMicroelectronics

STGWA40H60DLFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance

* Low VF soft recovery co-packag

STGWA40H60DLFB General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slig.

STGWA40H60DLFB Datasheet (867.36 KB)