STGWA75H65DFB2

IGBT

STMicroelectronics

STGWA75H65DFB2 Features

* C(2, TAB)

* Maximum junction temperature: TJ = 175 °C

* Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

* Very fast and soft recovery co-packaged diode

* Minimized tail current

* Tight parameter distribution

* Low thermal resistance

* Positive VCE(sa

STGWA75H65DFB2 General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. .

STGWA75H65DFB2 Datasheet (555.45 KB)