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STGWT60H60DLFB

Trench gate field-stop IGBT

STGWT60H60DLFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.6 V (typ.) @ IC = 60 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Low VF soft recovery

STGWT60H60DLFB General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a.

STGWT60H60DLFB Datasheet (828.95 KB)

Preview of STGWT60H60DLFB PDF

Datasheet Details

Part number:

STGWT60H60DLFB

Manufacturer:

STMicroelectronics ↗

File Size:

828.95 KB

Description:

Trench gate field-stop igbt.
STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1.

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STGWT60H60DLFB Trench gate field-stop IGBT STMicroelectronics

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