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STGWT60H60DLFB Datasheet - STMicroelectronics

STGWT60H60DLFB Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a.

STGWT60H60DLFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.6 V (typ.) @ IC = 60 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Low VF soft recovery

STGWT60H60DLFB Datasheet (828.95 KB)