STGWT60H65FB, STGW60H65FB Trench gate field-stop IGBT

STMicroelectronics

STGWT60H65FB Description

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1 F.
These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure.

STGWT60H65FB Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.6 V (typ. ) @ IC = 60 A
* Tight parameters distribution
* Safe paralleling

STGWT60H65FB Applications

* Photovoltaic inverters

📥 Download Datasheet

STGWT60H65FB Datasheet Preview — This datasheet PDF includes multiple part numbers: STGWT60H65FB, STGW60H65FB. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: STGWT60H65FB, STGW60H65FB
Manufacturer: STMicroelectronics ↗
File Size: 714.15 KB
Datasheet: STGW60H65FB-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT
Note: This datasheet PDF includes multiple part numbers: STGWT60H65FB, STGW60H65FB.
Please refer to the document for exact specifications by model.

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Trench gate field-stop IGBT STMicroelectronics

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