STGWT60H65DFB Datasheet, IGBT, STMicroelectronics

STGWT60H65DFB Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC

PDF File Details

Part number:

STGWT60H65DFB

Manufacturer:

STMicroelectronics ↗

File Size:

685.37kb

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📄 Datasheet

Description:

Trench gate field-stop igbt. These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB

STGWT60H65DFB Application

• Applications
• Photovoltaic inverters
• High-frequency converters Description These devices are IGBTs developed using an advanced pr

TAGS

STGWT60H65DFB

STMicroelectronics

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