STGWT60H65DFB

Trench gate field-stop IGBT

STMicroelectronics

STGWT60H65DFB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A

* Tight parameter distribution

* Safe paralleling

* Positive VCE(sat) temperature c

STGWT60H65DFB General Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the s.

STGWT60H65DFB Datasheet (685.37 KB)

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Datasheet Details

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STGWT60H65DFB

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STMicroelectronics ↗

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685.37 KB

Description:

Trench gate field-stop igbt.
STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long.

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STGWT60H65DFB Trench gate field-stop IGBT STMicroelectronics

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STGWT60H65DFB Features

STGWT60H65DFB General Description

Datasheet Details

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