STI28N60M2 Datasheet - STMicroelectronics

STI28N60M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency .

STI28N60M2 Features

* Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB )

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected Applications

STI28N60M2-STMicroelectronics.pdf