Datasheet4U Logo Datasheet4U.com

STI26NM60N

N-Channel MOSFET

STI26NM60N Features

* Drain Current

* ID=20A@ TC=25℃

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Low Drain-Source

STI26NM60N General Description


*Low Drain-Source On-Resistance APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. O.

STI26NM60N Datasheet (309.67 KB)

Preview of STI26NM60N PDF

Datasheet Details

Part number:

STI26NM60N

Manufacturer:

INCHANGE

File Size:

309.67 KB

Description:

N-channel mosfet.

📁 Related Datasheet

STI26NM60N N-channel Power MOSFET (STMicroelectronics)

STI260N6F6 N-channel Power MOSFET (STMicroelectronics)

STI200N6F3 Power MOSFETs (ST Microelectronics)

STI20N60M2-EP N-CHANNEL POWER MOSFET (STMicroelectronics)

STI20N65M5 N-Channel MOSFET (INCHANGE)

STI20N65M5 N-channel Power MOSFET (STMicroelectronics)

STI21N65M5 N-Channel MOSFET (INCHANGE)

STI21N65M5 N-CHANNEL MOSFET (STMicroelectronics)

STI21NM60ND N-channel MOSFET (STMicroelectronics)

STI22NM60N N-Channel MOSFET (INCHANGE)

TAGS

STI26NM60N N-Channel MOSFET INCHANGE

Image Gallery

STI26NM60N Datasheet Preview Page 2

STI26NM60N Distributor