STI260N6F6

N-channel Power MOSFET

STMicroelectronics

STI260N6F6 Features

* Order codes STI260N6F6 STP260N6F6 VDSS 60 V RDS(on) max ID < 0.003 Ω 120 A

* Low gate charge

* Very low on-resistance

* High avalanche ruggedness Application

* Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of S

STI260N6F6 General Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' .

STI260N6F6 Datasheet (350.20 KB)