STI26NM60N Datasheet - STMicroelectronics

STI26NM60N N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for.

STI26NM60N Features

* Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N

* TAB TAB VDSS 600 V 600 V 600 V 600 V 600 V RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω ID 3 20 A 20 A 20 A 20 A 20 A TAB 1 2 3 12 3 1 2 TO-220FP I²PAK TO-220 100% avalanche tested Low input

STI26NM60N Datasheet (715.01 KB)