STI11NM60ND N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor .

📥 Download Datasheet

STI11NM60ND Datasheet Preview — Preview of STI11NM60ND PDF

Datasheet Specifications

Part number: STI11NM60ND
Manufacturer: INCHANGE
File Size: 309.54 KB
Datasheet: STI11NM60ND-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 6.3A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 6.3 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 90 W TJ Max.

STI11NM60ND Distributors

📁 Related Datasheet

STI11NM80 STI100N10F7 STI1010 STI10N62K3 STI10NM60N STI120NH03L

📌 All Tags

STI11NM60ND N-Channel MOSFET INCHANGE

INCHANGE STI11NM60ND-like datasheet