STI12N65M5 Datasheet - STMicroelectronics

STI12N65M5 N-Channel Power MOSFET

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbase.

STI12N65M5 Features

* Type STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 VDSS @ RDS(on) TJmax max ID PTOT 710 V 8.5 A 8.5 A(1) < 0.43 Ω 8.5 A 8.5 A 8.5 A 70 W 25 W 70 W 70 W 70 W 1. Limited only by maximum temperature allowed.

* Worldwide best RDS(on)

* area

* Higher VDSS rating and high dv/

STI12N65M5-STMicroelectronics.pdf