STI11NM60ND N-Channel Power MOSFET

STMicroelectronics

Description

STI11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in an I²PAK package .
- O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology.

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Datasheet Specifications

Part number: STI11NM60ND
Manufacturer: STMicroelectronics ↗
File Size: 602.85 KB
Datasheet: STI11NM60ND_STMicroelectronics.pdf
Description: N-Channel Power MOSFET

Features

* TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB)
* Fast-recovery body diode
* Low gate charge and input capacitance
* Low on-resistance RDS(on)
* 100% avalanche tested
* High dv/dt ru

Applications

* le

STI11NM60ND Distributors

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STI11NM60ND N-Channel Power MOSFET STMicroelectronics

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