STI11NM60ND Datasheet, Mosfet, STMicroelectronics

STI11NM60ND Features

• Mosfet TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB)
• Fast-recovery body diode
• Low gate charge an

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STI11NM60ND

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STMicroelectronics ↗

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📄 Datasheet

Description:

N-channel power mosfet. - O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology. U

STI11NM60ND Application

• Applications le
• Switching applications so G(1) b Description - O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is prod

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STI11NM60ND

STMicroelectronics

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