STI11NM60ND - N-Channel Power MOSFET

STMicroelectronics

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Datasheet Details

Part number: STI11NM60ND
Manufacturer: STMicroelectronics ↗
File Size: 602.85 KB
Datasheet: STI11NM60ND_STMicroelectronics.pdf
Description: N-Channel Power MOSFET

STI11NM60ND Product details

Description

- O S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using t(s) AM01475v1_noZen MDmesh II technology.Utilizing a new strip-layout vertical structure, this device

Features

TAB Order code VDS at TJ max. RDS(on) max. ID STI11NM60ND 650 V 450 mΩ 10 A t(s) 1 2 3 uc I²PAK rod D(2, TAB).
Fast-recovery body diode.
Low gate charge and input capacitance.
Low on-resistance RDS(on).
100% avalanche tested.
High dv/dt ruggedness te P.

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N-Channel Power MOSFET STMicroelectronics

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