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STI18N65M5 N-Channel MOSFET

STI18N65M5 Description

Isc N-Channel MOSFET Transistor *.

STI18N65M5 Features

* Higher VDSS rating
* Excellent switching performance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STI18N65M5 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 15 9.4 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation 110 W T

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Datasheet Details

Part number
STI18N65M5
Manufacturer
INCHANGE
File Size
285.00 KB
Datasheet
STI18N65M5-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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