STI18N65M5 Datasheet - INCHANGE

STI18N65M5, N-Channel MOSFET

Isc N-Channel MOSFET Transistor *

Features

* Higher VDSS rating
* Excellent switching performance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 15 9.4 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation 110 W T

STI18N65M5-INCHANGE.pdf