STI18NM60N

N-channel Power MOSFET

STMicroelectronics

STI18NM60N Features

* Order codes VDSS (@Tjmax) RDS(on) max. ID PW STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110 W

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Application Switching applications Description

STI18NM60N General Description

These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficienc.

STI18NM60N Datasheet (539.36 KB)

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Datasheet Details

Part number:

STI18NM60N

Manufacturer:

STMicroelectronics ↗

File Size:

539.36 KB

Description:

N-channel power mosfet.
STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and.

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STI18NM60N N-channel Power MOSFET STMicroelectronics

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STI18NM60N Features

STI18NM60N General Description

Datasheet Details

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