STI13NM60N - N-Channel MOSFET

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Datasheet Details

Drain Current.
ID= 11A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max).
100% avalanche tested.
Low input capacitance and gate charge.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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