STK184N4F7AG Datasheet - STMicroelectronics

STK184N4F7AG Automotive-grade N-channel Power MOSFET

S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G4S123DTAB_LFPAK Product status link STK1.

STK184N4F7AG Features

* Order code STK184N4F7AG V DS 40 V RDS(on) max. 2.0 mΩ

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Switching applic

STK184N4F7AG-STMicroelectronics.pdf