STK32N4LLH5 Datasheet - STMicroelectronics

STK32N4LLH5 - Power MOSFET

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on) *Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Bottom View.

STK32N4LLH5 Features

* Type STK32N4LLH5

* VDSS RDS(on) max RDS(on)

* Qg 40 V < 0.0025 Ω 106.4nC

* mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)

* Qg industry benchmark High avalanche ruggedness Fully encapsulated

STK32N4LLH5_STMicroelectronics.pdf