STL10N60M2 Datasheet - STMicroelectronics

STL10N60M2 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui.

STL10N60M2 Features

* 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL10N60M2 VDS @ TJmax 650 V RDS(on) max 0.660 Ω ID 5.5 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

STL10N60M2-STMicroelectronics.pdf