STL18N60M2 Datasheet (STMicroelectronics)

STL18N60M2, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

It is therefore su

STL18N60M2 Features

* 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) G(4) S(1, 2, 3) AM01476v1 Order code STL18N60M2 VDS @ TJmax 650 V RDS(on) max 0.308 Ω ID 9A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistan