STN4NF06L
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Automotive-grade n-channel mosfet. This Power MOSFET has been developed using STMicroelectronics' unique S(3) STripFET process, which is specifically designed to min
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STN4NF03L - N-CHANNEL POWER MOSFET
(ST Microelectronics)
STN4NF03L
N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET
TYPE STN4NF03L
s s
VDSS 30V
RDS(on) <0.05Ω
ID 6.5A
2
TYPICAL RDS(on) = 0.
STN4NF20L - N-Channel Power MOSFET
(STMicroelectronics)
STN4NF20L
N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET™ II Power MOSFET
Features
Order code STN4NF20L
VDSS 200 V
RDS(on) max.
< 1..
STN4NE03 - N-CHANNEL POWER MOSFET
(ST Microelectronics)
®
STN4NE03
N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET™ POWER MOSFET
TYPE ST N4NE03
s s s s s
V DSS 30 V
R DS(on) < 0.06 Ω
ID 4 A
TYPICAL R.
STN4NE03L - N-CHANNEL POWER MOSFET
(ST Microelectronics)
®
STN4NE03L
N - CHANNEL 30V - 0.037Ω - 4A - SOT-223 STripFET™ POWER MOSFET
TYPE ST N4NE03L
s s s s s
V DSS 30 V
R DS(on) < 0.05 Ω
ID 4 A
TYPICAL.
STN4102 - MOSFET
(Stanson Technology)
STN4102
N Channel Enhancement Mode MOSFET
15.0A
DESCRIPTION
STN4102 is the N-Channel logic enhancement mode power field effect transistor which is p.
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(Stanson Technology)
STN410D
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15.0A
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(Stanson Technology)
STN4110
N Channel Enhancement Mode MOSFET
40.0A
DESCRIPTION
STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devi.
STN4130 - MOSFET
(Stanson Technology)
STN4130
N Channel Enhancement Mode MOSFET
20.0A
DESCRIPTION
STN4130 is used trench technology to provide excellent RDS(on) and gate charge. Those devi.
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(Stanson Technology)
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
DESCRIPTION
STN4186D is the N-Channel logic enhancement mode power field effect transistor which is p.
STN4260 - N-Channel Enhancement Mode MOSFET
(STANSON)
STN4260
N Channel Enhancement Mode MOSFET
18A
DESCRIPTION
STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produ.