STN4NF20L
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N-channel power mosfet. This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capac
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STN4NF03L - N-CHANNEL POWER MOSFET
(ST Microelectronics)
STN4NF03L
N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET
TYPE STN4NF03L
s s
VDSS 30V
RDS(on) <0.05Ω
ID 6.5A
2
TYPICAL RDS(on) = 0.
STN4NF06L - Automotive-grade N-channel MOSFET
(STMicroelectronics)
STN4NF06L
Datasheet
Automotive-grade N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package
4 3
2 1 SOT-223
D(2, 4)
Features.
STN4NE03 - N-CHANNEL POWER MOSFET
(ST Microelectronics)
®
STN4NE03
N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET™ POWER MOSFET
TYPE ST N4NE03
s s s s s
V DSS 30 V
R DS(on) < 0.06 Ω
ID 4 A
TYPICAL R.
STN4NE03L - N-CHANNEL POWER MOSFET
(ST Microelectronics)
®
STN4NE03L
N - CHANNEL 30V - 0.037Ω - 4A - SOT-223 STripFET™ POWER MOSFET
TYPE ST N4NE03L
s s s s s
V DSS 30 V
R DS(on) < 0.05 Ω
ID 4 A
TYPICAL.
STN4102 - MOSFET
(Stanson Technology)
STN4102
N Channel Enhancement Mode MOSFET
15.0A
DESCRIPTION
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(Stanson Technology)
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N Channel Enhancement Mode MOSFET
15.0A
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(Stanson Technology)
STN4110
N Channel Enhancement Mode MOSFET
40.0A
DESCRIPTION
STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devi.
STN4130 - MOSFET
(Stanson Technology)
STN4130
N Channel Enhancement Mode MOSFET
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DESCRIPTION
STN4130 is used trench technology to provide excellent RDS(on) and gate charge. Those devi.
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(Stanson Technology)
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N Channel Enhancement Mode MOSFET
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DESCRIPTION
STN4186D is the N-Channel logic enhancement mode power field effect transistor which is p.
STN4260 - N-Channel Enhancement Mode MOSFET
(STANSON)
STN4260
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18A
DESCRIPTION
STN4260 is the N-Channel logic enhancement mode power field effect transistor which is produ.