STP170N8F7

N-CHANNEL POWER MOSFET

STMicroelectronics

STP170N8F7 Features

* TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram '7$%

* Order code VDS RDS(on) max. ID PTOT STP170N8F7 80 V 0.0039 Ω 120 A 250 W

* Among the lowest RDS(on) on the market

* Excellent figure of merit (FoM)

* Low Crss/Ciss ratio for EMI immunity

* High

STP170N8F7 General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 $0Y Order code STP170N8F7 Table 1. Device .

STP170N8F7 Datasheet (744.06 KB)