STP45N60DM2AG

N-channel Power MOSFET

STMicroelectronics

STP45N60DM2AG Features

* Order code STP45N60DM2AG VDS @ TJmax. 650 V RDS(on) max. 0.093 Ω ID PTOT 34 A 250 W Figure 1: Internal schematic diagram

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

STP45N60DM2AG General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STP45N60DM2AG Datasheet (305.55 KB)