STP5N95K5 Datasheet - STMicroelectronics

STP5N95K5 N-channel Power MOSFET

S(3) This very high voltage N-channel Power MOSFET is designed using MDmesh AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high.

STP5N95K5 Features

* TAB TO-220 1 23 D(2, TAB) Order code VDS STP5N95K5 950 V

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications RDS(on) max. 2.5 Ω ID 3.5 A G(1

STP5N95K5-STMicroelectronics.pdf