STU1HN60K3 - N-CHANNEL POWER MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STU1HN60K3
Manufacturer	STMicroelectronics
File Size	797.12 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STU1HN60K3 Datasheet
Additional preview pages of the STU1HN60K3 datasheet.

Product details

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W.
100% avalanche tested.
Extremely high dv/dt capability.
Gate charge minimized.
Very low intrinsic capacitance.
Improved diode reverse recovery characteristics.
Zener-protected.

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Published: Nov 6, 2015 |