STU1HN60K3 Datasheet (STMicroelectronics)

STU1HN60K3, N-CHANNEL POWER MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitabl

STU1HN60K3 Features

* Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized

* Very low intrinsic capacitance

* Improved diode reverse recovery characteristics

* Zen