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STU1HN60K3 N-CHANNEL POWER MOSFET

STU1HN60K3 Description

STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3™ Power MOSFET in DPAK and IPAK packages Datasheet * production data TAB.
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized ver.

STU1HN60K3 Features

* Order codes VDS STD1HN60K3 600 V STU1HN60K3 RDS(on) max 8Ω ID PTOT 1.2 A 27 W
* 100% avalanche tested
* Extremely high dv/dt capability
* Gate charge minimized
* Very low intrinsic capacitance
* Improved diode reverse recovery characteristics
* Zen

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N-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STU1HN60K3-like datasheet