STU2N105K5 Datasheet (STMicroelectronics)

STU2N105K5, N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

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STU2N105K5 Features

* Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W

* Industry’s lowest RDS(on) x area

* Industry’s best figure of merit (FoM)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected Applications