STU2N105K5 Datasheet - STMicroelectronics

STU2N105K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order .

STU2N105K5 Features

* Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W

* Industry’s lowest RDS(on) x area

* Industry’s best figure of merit (FoM)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected Applications

STU2N105K5-STMicroelectronics.pdf