STU2N80K5 Datasheet - STMicroelectronics

STU2N80K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order .

STU2N80K5 Features

* Order codes STD2N80K5 STF2N80K5 STP2N80K5 STU2N80K5 VDS 800 V RDS(on)max 4.5 Ω ID 2A PTOT 45 W 20 W 45 W

* Industry’s lowest RDS(on)

* area

* Industry’s best figure of merit (FoM)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected App

STU2N80K5-STMicroelectronics.pdf