STU7N105K5 Datasheet - STMicroelectronics

STU7N105K5 N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Orde.

STU7N105K5 Features

* Order code VDS RDS(on) max. ID PTOT STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W STW7N105K5

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications

* Switching applications

STU7N105K5-STMicroelectronics.pdf