STW24N60DM2 Datasheet - STMicroelectronics

STW24N60DM2 N-CHANNEL POWER MOSFET

These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of .

STW24N60DM2 Features

* Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A

* Extremely low gate charge and input capacitance

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-prote

STW24N60DM2 Datasheet (668.20 KB)