STW24N60DM2 Datasheet - STMicroelectronics

STW24N60DM2, N-CHANNEL POWER MOSFET

STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages .
These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1.

Features

* Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A
* Extremely low gate charge and input capacitance
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested
* Zener-prote

Applications

* G(1)

STW24N60DM2-STMicroelectronics.pdf